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Data Sheet No. PD 96933A
IRIS-A6151
*Small sized 8-pin DIP type full molded package, optimum IC for lowheight SMPS Package Outline *Off-timer circuit is provided on the monolithic control IC * Low start-up circuit current (10uA typ) *Low circuit current at operation (1.5mA typ) * Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. *Built-in Start-up circuit (the power loss in the start-up circuit is reduced by cutting off the start-up circuit after the IC starts its operation.) *Auto Burst Stand-by (realizing input power<0.1W at no load) *Auto Bias Function (stable burst operation without the interference on transformer) *Two operational modes by auto switching functions For normal operation: PRC mode 8 Lead PDIP For stand-by operation (at light load): Burst mode *Built-in Leading Edge Blanking Function Key Specifications *Built-in constant voltage drive circuit MOSFET RDS(ON) *Various kinds of protection functions Type VDSS(V) MAX ACinput(V) Pulse-by-pulse Overcurrent Protection (OCP) 23015% Overload Protection with auto recovery (OLP) 85 to 264 IRIS-A6151 650 4 Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD)
Features
INTEGRATED SWITCHER
Pout(W) Note 1 10 8
Descriptions
IRIS-A6151 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Note: PRC is abbreviation for "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
8 D D
7
6 NC
5
Startup
IRIS-A6151
OCP 1 Vcc 2 GND 3 FB 4
Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above value.
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IRIS-A6151
Absolute Maximum Ratings (Ta=25)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol IDpeak IDMAX
Definition Drain Current *1 Maximum switching current
Terminals Max. Ratings 8-3 2.5 8-3 2.5
Units A A
EAS VOCP VCC VFB/OLP Vstartup PD1 PD2 TF Top Tstg Tch
Single pulse avalanche energy *2 O.C.P. pin Voltage Input voltage for control part F.B/O.L.P pin voltage Startup pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature
8-3 1-3 2-3 4-3 5-3 8-3 2-3 -
72 -0.5~6 35 -0.5~10 -0.3~600 1.35 0.15 -20 ~ +125 -20 ~ +125 -40 ~ +125 150
mJ V V V V W W
Note Single Pulse V1-3=0.86V Ta=-20~+125 Single Pulse VDD=99V,L=20mH IL=2.5A
*5 Specified by VccxICC
Refer to recommended operating temperature
*1 Refer to MOSFET A.S.O curve *2 Refer to MOSFET Tch-EAS curve *3 Refer to MOSFET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC *5 When embedding this hybrid IC onto the printed circuit board (board size 15mmx15mm)
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IRIS-A6151
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=20V,unless otherwise specified)
Symbol Definition VCC(ON) Operation start voltage VCC(OFF) Operation stop voltage ICC(ON) ICC(OFF) VCC(bias) TOFF(MAX) VOCP Tbw Vburst VOLP IOLP IFB(MAX) Circuit current in operation Circuit current in non-operation Auto bias threshold voltage Vcc(bias) - Vcc(OFF) Maximum OFF time O.C.P. threshold voltage Leading edge blanking time Burst threshold voltage O.L.P. threshold voltage Out-flow current at O.L.P operation Maximum F.B. current
MIN 16 9 9.6 0.2 7.3 0.69 200 0.7 6.5 18 227 340 28.7 6.6 135
Ratings TYP 17.5 10 10.6 8 0.77 320 0.79 7.2 26 300 790 31.2 7.3 -
MAX 19.2 11 4 50 11.6 8.7 0.86 480 0.88 7.9 35 388 1230 30 34.1 200 8 -
Units V V mA A V V sec V nsec V V A A A A V A V
Test Conditions
VCC=019.2V VCC=19.29.V
VCC=14V VCC=209.6V
VCC=15V
IST ART UP Startup current IST ART (leak) Startup circuit leakage current VCC(OVP ) ICC(H) O.V.P operation voltage Latch circuit sustaining current *6 Latch circuit release voltage *6
VCC=034.1V VCC=34.18.5V VCC=34.16.6V
VCC(La.OFF) Tj(TSD) Thermal shutdown operating temperature
-
*6 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
Symbol VDSS
Definition Drain-to-Source breakdown voltage
MIN 650 *7 -
Ratings TYP -
MAX 300 4 250 52
Units V A nsec /W
Test Conditions
ID=300A V1- 3=0V(short) VDS =650V V1- 3=0V(short) ID=0.4A
Drain leakage current IDSS RDS(ON) On-resistance tf Switching time ch-F Thermal resistance
Between channel and internal frame
*7 Internal frame temperature (TF) is measured at the root of the Pin 3.
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IRIS-A6151
IRIS-A6151
A.S.O. temperature derating coefficient curve
IRIS-A6151 MOSFET A.S.O. Curve 100
Ta=25C
100
Single Pulse
A.S.O. temperature derating coefficient[%]
80
10 Drain Current ID[A]
Drain current limit by ON resistance
0.1ms
60
1ms
1
40
0.1
20
ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use.
0 0 20 40 60 80 100 120
0.01 1 10 100 1000 Drain-to-Source Voltage VDS[V]
Internal frame temperature TF []
IRIS-A 6151 A valanche energy derating curve 100
EAS temperature derating coefficient [%]
80
60
40
20
0 25 50 75 100 125 150 Channel temperature Tch [ ]
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IRIS-A6151
IRIS-A6151 MOSFET Ta-PD1 Curve 1.6 1.4 1.2 Power dissipation PD1[W]
IRIS-A6151 MIC TF-PD2 Curve 0.16
PD2=0.15[W] PD2=0.15[W]
PD1=1.35[W]
0.14 0.12 Power dissipation PD2[W] 0.1 0.08 0.06 0.04 0.02 0
1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta[]
0
20 40 60 80 100 120 Internal frame temperature TF[]
140
IRIS-A6151 Transient thermal resistance curve 100 Transient thermal resistance ch-c[/W]
10
1
0.1
0.01
1
10
100
1m
10m
time t [sec]
100m
1
10
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IRIS-A6151 Block Diagram
Vcc 2 Startup 5 UVLO

OVP Internal Bias Latch Delay

TSD 8D Power MOS FET OFF Timer
Drive
7D

PWM Latch
SQ R

Bias
OLP

Burst FB
Blanking Discharge OCP 1 Source/OCP

Lead Assignments
Pin Assignment (Top View) S/OCP VCC GND FB/OLP 1 2 3 4 8 7 6 5 Drain Drain N.C. Startup
Pin No.
1 2 3 4 5 6 7 8
Symbol S/OCP VCC GND FB/OLP Startup N.C. Drain Drain
Other Functions
O.V.P. - Overvoltage Protection Circuit T.S.D. - Thermal Shutdown Circuit

Buffer 3 GND 4 FB/OLP
Description Source Pin/OCP Power supply Pin Ground Pin Feedback/OLP pin Startup pin Drain Pin Drain Pin
Function MOSFET source /Overcurrent Protection Input of power supply for control circuit Ground Input of constant voltage control signal/over load protection signal Input of Startup current Not Connected MOSFET drain MOSFET drain
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IRIS-A6151
Case Outline
a. Type Number b. Lot Number 1st letterThe last digit of year 2nd letterMonth (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd letterWeek 13 : Arabic numerals c. Registration Number
8
76
5
A6151
I R
1 23 4
a
b c
Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information.
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